BC856B Datasheet

BC856B

Datasheet specifications

Datasheet's name BC856B
File size 42.615 KB
File type pdf
Number of pages 4

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: CBI BC856B
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 200mW
  • Transition Frequency (fT): 100MHz
  • DC Current Gain (hFE@Ic,Vce): 200@2mA,5V
  • Collector Cut-Off Current (Icbo): 15nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 650mV@100mA,5mA
  • Package: SOT-23(TO-236)
  • Manufacturer: CBI

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