دیتاشیت BC856B
مشخصات دیتاشیت
| نام دیتاشیت |
BC856B
|
| حجم فایل |
270.319
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
3
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Yangzhou Yangjie Elec Tech BC856B
-
Transistor Type:
PNP
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
200mW
-
Transition Frequency (fT):
100MHz
-
DC Current Gain (hFE@Ic,Vce):
220@2mA,5V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
65V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
650mV@100mA,5mA
-
Package:
SOT-23-3
-
Manufacturer:
Yangzhou Yangjie Elec Tech
